| PART |
Description |
Maker |
| RJK03R4DPA RJK03R4DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N0DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| CPH5826 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| MCH5818 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| FCQ20A03L |
SBD DUAL DIODES - CATHODE COMMON
|
Nihon Inter Electronics Corporation
ETC
|
| M1FH3 |
Schottky Rectifiers (SBD) / Single (Surface Mount)
SCHOTTKY RECIFIERS (SBD)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| SC16IS752IBS157 |
Dual UART with I2C-bus/SPI interface, 64 bytes of transmit and receive FIFOs, IrDA SIR built-in support; Package: SOT617-1 (HVQFN32); Container: Tray Pack, Bakeable, Multiple 2 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PQCC32
|
NXP Semiconductors N.V.
|
